PART |
Description |
Maker |
R1LV0216BSB-5SI-B0 R1LV0216BSB-5SI-S0 R1LV0216BSB- |
2Mb Advanced LPSRAM (128k word x 16bit)
|
Renesas Electronics Corporation
|
R1LV0816ABG-5SI |
8Mb Advanced LPSRAM (512k word x 16bit)
|
Renesas Electronics Corporation
|
R1LV0816ASD-5SI R1LV0816ASD-7SI |
8Mb Advanced LPSRAM (512k word x 16bit / 1M word x 8bit)
|
Renesas Electronics Corporation
|
GS84032AB-100 GS84032AB-100I GS84032AB-150 GS84032 |
100MHz 12ns 128K x 32 4Mb sync burst SRAM 150MHz 10ns 128K x 32 4Mb sync burst SRAM 166MHz 8.5ns 128K x 32 4Mb sync burst SRAM
|
GSI Technology
|
M40Z300 M40Z300MH M40Z300MH1 M40Z300MH1TR M40Z300M |
NVRAM CONTROLLER for up to EIGHT LPSRAM
|
ST Microelectronics STMicroelectronics
|
M40Z111 M40Z111MH M40Z111SH M40Z111W M40Z111WMH M4 |
NVRAM CONTROLLER for up to TWO LPSRAM
|
意法半导 STMicroelectronics
|
GS842Z18AB-166 GS842Z18AB-166I GS842Z18AB-180 GS84 |
4Mb NBT SRAMs 4Mb Pipelined and Flow Through Synchronous NBT SRAMs
|
GSI[GSI Technology]
|
M4Z32-BR00SH M40SZ100 M40SZ100W M40SZ100WMH M40SZ1 |
5V or 3V NVRAM SUPERVISOR FOR LPSRAM 5VV的LPSRAM NVRAM中督导员 ZEROPOWER SNAPHAT Battery
|
STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
M40SZ100Y10 M40SZ100W M40SZ100WMH6E M40SZ100WMH6F |
5 V or 3 V NVRAM supervisor for LPSRAM 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO28
|
STMicroelectronics
|
GS842Z18AB-180 GS842Z36AB-180 GS842Z36AB-150I GS84 |
180MHz 8ns 256K x 18 4Mb pipelined and flow through synchronous NBT SRAM 180MHz 8ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM 150MHz 10ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM 166MHz 8.5ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM 150MHz 10ns 256K x 18 4Mb pipelined and flow through synchronous NBT SRAM
|
GSI Technology
|
M29DW324DB70ZA6 M29DW324DB70ZA6F M29DW324DB70ZE6F |
CABLE ASSEMBLY; LEAD-FREE SOLDER; N MALE TO N FEMALE; 50 OHM, RG225/U COAX, DOUBLE SHIELDED 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽,双66分,启动V电源快闪记忆 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽,双66分,启动3V电源快闪记忆 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽,双1616分,启动V电源快闪记忆 32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 16:16 / Boot Block 3V Supply Flash Memory
|
SGS Thomson Microelectronics 意法半导 STMicroelectronics N.V. ST Microelectronics
|
HSDL-3602-007 HSDL-3602-008 HSDL-3602-037 HSDL-360 |
HSDL-3602-007 · IrDA 1.1 Data Compliant 4Mb/s 3V Infrared Transceiver HSDL-3602-008 · IrDA 1.1 Data Compliant 4Mb/s 3V Infrared Transceiver HSDL-3602-037 · IrDA 1.1 Data Compliant 4Mb/s 3V Infrared Transceiver HSDL-3602-038 · IrDA 1.1 Data Compliant 4Mb/s 3V Infrared Transceiver
|
Agilent (Hewlett-Packard)
|